Heating of circular silicon wafer plate under laser annealing is
modeled by Non-Linear FEM. Laser source is modeled by concave shaped plate
with focus immediately beneath the wafer surface.
Heat source is placed over the wafer surface with fixed temperature, and
sinusoidal motion. The radiosity is calculated from the geometry around
the heat source and the silicon wafer.
A heat source parabolic surface with the following specifications
is placed at the position 50(mm) above the disk surface:
Diameter : 26(mm)
Aperture angle : 30(deg)
Focal length : 50(mm)
Heat source temperature : 1500(degK) - 1800(degK)
Moving velocity : 25(mm/sec)
Temperature change frequency : 4(Hz)
Silicon wafer Diameter : 200(mm)
